파트넘버.co.kr 4957AGM 데이터시트 PDF


4957AGM 반도체 회로 부품 판매점

AP4957AGM



Advanced Power Electronics 로고
Advanced Power Electronics
4957AGM 데이터시트, 핀배열, 회로
Advanced Power
Electronics Corp.
AP4957AGM
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Simple Drive Requirement
Dual P MOSFET Package
D2
D2
D1
D1
Description
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
S2
G1
S1
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
-30V
26mΩ
-7.4A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
-30
±20
-7.4
-5.9
-30
2
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
Unit
/W
Data and specifications subject to change without notice
1
200712191
Free Datasheet http://www.datasheet4u.net/


4957AGM 데이터시트, 핀배열, 회로
AP4957AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=-250uA
VGS=-10V, ID=-7A
VGS=-4.5V, ID=-5A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-7A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS=±20V
ID=-7A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
-30 - - V
- - 26 mΩ
- - 36 mΩ
-1 - -3 V
-7-S
- - -1 uA
- - -25 uA
- - ±100 nA
- 16 26 nC
- 2.8 - nC
- 9.3 - nC
- 9 - ns
- 6.5 - ns
- 40 - ns
- 26 - ns
- 1215 1950 pF
- 190 - pF
- 185 - pF
- 5.3 8 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 22 - ns
- 14 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
Free Datasheet http://www.datasheet4u.net/




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