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XP151A12A2MR-G 반도체 회로 부품 판매점

Power MOS FET



TOREX 로고
TOREX
XP151A12A2MR-G 데이터시트, 핀배열, 회로
XP151A12A2MR-G
Power MOSFET
ETR1118_002
GENERAL DESCRIPTION
The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
APPLICATIONS
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
FEATURES
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
: Rds(on) = 0.16Ω@ Vgs = 2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 2.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
PIN CONFIGURATION
GGate
SSource
DDrain
EQUIVALENT CIRCUIT
PRODUCT NAMES
Products
Detail
XP151A12A2MR
SOT-23
XP151A12A2MR-G
SOT-23(Halogen & Antimony Free)
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being
fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ABSOLUTE MAXIMUM RATINGS
Ta = 25
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage
Gate - Source Voltage
Vdss
Vgss
20
±12
V
V
Drain Current (DC)
Id
1A
Drain Current (Pulse)
Idp
4
A
Reverse Drain Current
Idr
1A
Channel Power Dissipation *
Channel Temperature
Storage Temperature Range
Pd
Tch
Tstg
0.5
150
-55~150
W
* When implemented on a ceramic PCB
1/5
Free Datasheet http://www.datasheet4u.com/


XP151A12A2MR-G 데이터시트, 핀배열, 회로
XP151A12A2MR-G
ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
SYMBOL
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance *1 Rds(on)
CONDITIONS
Vds= 20V, Vgs= 0V
Vgs= ±12V, Vds= 0V
Id= 1mA, Vds= 10V
Id= 0.5A, Vgs= 4.5V
Id= 0.5A, Vgs= 2.5V
Forward Transfer Admittance *1 | Yfs |
Id= 0.5A, Vds= 10V
Body Drain Diode
Forward Voltage
*1 Effective during pulse test.
Vf
If= 1A, Vgs= 0V
MIN.
-
-
0.7
-
-
TYP.
-
-
-
0.075
0.120
Ta = 25
MAX.
10
±10
1.4
0.1
0.160
UNITS
μA
μA
V
Ω
Ω
- 3.3 -
S
- 0.8 1.1 V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= 10V, Vgs=0V
f= 1MHz
MIN.
-
-
-
TYP.
180
120
45
Ta = 25
MAX. UNITS
- pF
- pF
- pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= 5V, Id= 0.5A
Vdd= 10V
MIN.
-
-
-
-
TYP.
10
15
50
45
Ta = 25
MAX. UNITS
- ns
- ns
- ns
- ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a ceramic PCB
MIN.
-
TYP.
250
MAX. UNITS
- /W
2/5
Free Datasheet http://www.datasheet4u.com/




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