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PDF XP151A12A2MR Data sheet ( Hoja de datos )

Número de pieza XP151A12A2MR
Descripción Power MOS FET
Fabricantes TOREX 
Logotipo TOREX Logotipo



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No Preview Available ! XP151A12A2MR Hoja de datos, Descripción, Manual

N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.1(max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 23 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
The XP151A12A2MR is a N-Channel Power MOS FET with low on
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.1( Vgs = 4.5V )
Rds (on) = 0.16( Vgs = 2.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : 2.5V
High density mounting : SOT - 23
Pin Configuration
uD
3
12
GS
SOT - 23 Top View
Equivalent Circuit
3
12
N - Channel MOS FET
( 1 device built-in )
Pin Assignment
PIN NUMBER
1
2
3
PIN NAME
G
S
D
FUNCTION
Gate
Source
Drain
Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
( note ) : When implemented on a ceramic PCB
RATINGS
20
+ 12
1
4
1
0.5
150
-55 to 150
Ta=25OC
UNITS
V
V
A
A
A
W
OC
OC
Free Datasheet http://www.datasheet4u.com/

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