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PDF J603 Data sheet ( Hoja de datos )
| Número de pieza | J603 | |
| Descripción | P-Channel MOSFET ( Transistor ) - 2SJ603 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A)
RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A)
• Low input capacitance:
Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
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Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 25
m 70
Total Power Dissipation (TC = 25°C) PT 50
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS −25
EAS 62.5
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ603
2SJ603-S
TO-220AB
TO-262
2SJ603-ZJ
2SJ603-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan.
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14648EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001
Free Datasheet http://www.datasheet4u.com/
1 page  
2SJ603
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
80
–4.5V
VGS = –4.0 V
60
–10 V
40
20
0
−50
0
ID = –13 A
50 100 150
Tch - Channel Temperature - ˚C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100 Pulsed
VGS = –10 V
–10
–4.0 V
–1 0 V
–0.1
–0.01
0
–0.5 –1.0
VSD - Source to Drain Voltage - V
–1.5
10000
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1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
–0.1
–1 –10
VDS - Drain to Source Voltage - V
–100
1000
SWITCHING CHARACTERISTICS
VDD = –30 V
VGS = –10 V
RG = 0 Ω
100
td(off)
tf
10 td(on)
tr
1
–0.1 –1 –10 –100
ID - Drain Current - A
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1 1 10
IF - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60 –12
ID = –25 A
–50
VDD = –48 V
–30 V
–40 –12 V
–10
VGS –8
–30 –6
–20 –4
–10
0
0
–2
VDS
0
5 10 15 20 25 30 35 40
QG - Gate Charge - nC
Data Sheet D14648EJ3V0DS
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet J603.PDF ] | |
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