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Toshiba |
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S17S
VCO for UHF Band Radio
• High Capacitance Ratio: C1V/C4V = 2.1 (typ.)
• Low Series Resistance : rs = 0.6 Ω (typ.)
• This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
150
−55~150
Unit
V
°C
°C
JDV2S17S
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 µA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
⎯
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯ V
⎯ ⎯ 3 nA
1.77 ⎯ 2.01
pF
0.8 ⎯ 1.0
2 ⎯ 2.2 ⎯
⎯ 0.6 0.75 Ω
J
1 2004-02-09
Free Datasheet http://www.datasheet4u.com/
JDV2S17S
C-V
10
f=1MHz
Vsig=100mVrms
1
0.1
0
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
234
VR(V)
rs-VR
1
VR(V)
56
f=470MHz
10
2 2004-02-09
Free Datasheet http://www.datasheet4u.com/
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