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PDF ZVN2106G Data sheet ( Hoja de datos )
| Número de pieza | ZVN2106G | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – NOVEMBER 1995
FEATURES
* 60 Volt VDS
* RDS(on)=2Ω
ZVN2106G
D
COMPLEMENTARY TYPE - ZVP2106G
PARTMARKING DETAIL - ZVN2106
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 60 V
Continuous Drain Current at Tamb=25°C
ID
710 mA
Pulsed Drain Current
IDM 8 A
Gate Source Voltage
VGS
± 20 V
Power Dissipation at Tamb=25°C
Ptot
2.0 W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
S
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
BVDSS
VGS(th)
IGSS
IDSS
60 V
0.8 2.4 V
20 nA
500 nA
100 µA
ID=1mA, VGS=0V
ID=1mA, VDS= VGS
VGS=± 20V, VDS=0V
VDS=60 V, VGS=0
VDS=48 V, VGS=0V,
T=125°C(2)
On-State Drain Current (1)
Static Drain-Source On-State
Resistance (1)
ID(on)
2
A VDS=18V, VGS=10V
RDS(on)
2 Ω VGS=10V,ID=1A
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
gfs
Ciss
Coss
300
75
45
mS VDS=18V,ID=1A
pF
pF VDS=18 V, VGS=0V, f=1MHz
ReverseTransfer Capacitance(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
Crss
td(on)
tr
td(off)
tf
20 pF
7 ns
8 ns
12 ns
VDD ≈18V, ID=1A
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 385
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZVN2106G.PDF ] | |
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