|
|
PDF 09N70P Data sheet ( Hoja de datos )
| Número de pieza | 09N70P | |
| Descripción | AP09N70P | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 09N70P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
AP09N70P/R
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
GG
D
D
S
S
BVDSS
RDS(ON)
ID
Description
AP09N70 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 G
type provide high blocking voltage to overcome voltage surge and sag in the D
toughest power system with the best combination of fast switching,ruggedized S
design and cost-effectiveness.
600/675V
0.75Ω
9A
TO-220(P)
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
VDS Drain-Source Voltage
VGS Gate-Source Voltage
- /A 600/675
± 30
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
9
5
40
156
1.25
305
9
9
-55 to 150
-55 to 150
TO-262(R)
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.8
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200218032
Free Datasheet http://www.datasheet4u.com/
1 page  
AP09N70P/R
16
14 I D =9A
12
V DS =320V
10 V DS =400V
V DS =480V
8
6
4
2
0
0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
70
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
Coss
100
Crss
1
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 09N70P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 09N70P | AP09N70P | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |