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Ordering number : ENA0279
2SC6082
SANYO Semiconductors
DATA SHEET
2SC6082
NPN Epitaxial Planar Silicon Transistor
50V / 15A High-Speed Switching Ap-
plications
Applications
• High-speed switching applications (switching regulator, driver circuit).
Features
• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=330mA
VCE=2V, IC=10A
Ratings
60
60
50
6
15
20
3
2
25
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
min
200
50
Ratings
typ
max
10
10
560
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 31506FA MS IM TB-00002089 No. A0279-1/4
Free Datasheet http://www.datasheet4u.com/
2SC6082
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=2A
VCB=10V, f=1MHz
IC=7.5A, IB=375mA
IC=7.5A, IB=375mA
IC=100µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
195
85
200
60
60
50
6
52
560
37
max
400
1.2
Unit
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7508-002
10.0
3.2
4.5
2.8
1.6
1.2
0.75 0.7
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
IB1
IB2
RB
50Ω +
100µF
VBE= --5V
IC=20IB1= --20IB2=5A
OUTPUT
RL
+
470µF
VCC=25V
123
2.55 2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
15
From a top
14 300mA
13 250mA
12
200mA
180mA
11 150mA
10 120mA
9 100mA
IC -- VCE
50mA
40mA
30mA
8
20mA
7
6
5
90mA 80mA 70mA 60mA
10mA
4
3
2
1
0
IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT10574
IC -- VCE
10
9 50mA 40mA
8 30mA
7 20mA
6 15mA
5
10mA
4
3
5mA
2
1
0 IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT10575
No. A0279-2/4
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