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Hitachi Semiconductor |
2SB791(K)
Silicon PNP Epitaxial
Application
Medium speed and power switching complementary pair with 2SD970(K)
Outline
TO-220AB
2
1
23
http://www.DataSheet4U.com/
1. Base
2. Collector
(Flange)
3. Emitter
1
2 kΩ
(Typ)
200 Ω
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Rating
–120
–120
–7
–8
–12
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB791(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
–120
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note: 1. Pulse test
I CBO
I CEO
hFE
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)(1)
VBE(sat)(2)
t on
t stg
tf
—
—
1000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
0.5
1.6
1.5
Max Unit
—V
—V
–100 µA
–10 µA
20000
–1.5 V
–3.0 V
–2.0 V
–3.5 V
— µs
— µs
— µs
Test conditions
IC = –25 mA, RBE = ∞
IE = –50 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE = ∞
VCE = –3 V, IC = –4 A*1
IC = –4 A, IB = –8 mA*1
IC = –8 A, IB = –80 mA*1
IC = –4 A, IB = –8 mA*1
IC = –8 A, IB = –80 mA*1
IC = –4 A, IB1 = IB2 = –8 mA
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
http://www.DataSheet4U.com/
–30
Area of Safe Operation
iC(peak)
–10
ICmax DC
–3 (Continuous) Operation
–1.0
1 µs
–0.3 Ta = 25°C
1 Shot Pulse
–0.1
–0.03
–1 –3 –10 –30 –100 –300 –1,000
Collector to emitter voltage VCE (V)
2
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