파트넘버.co.kr C6019 데이터시트 PDF


C6019 반도체 회로 부품 판매점

NPN Transistor - 2SC6019



Sanyo Semicon Device 로고
Sanyo Semicon Device
C6019 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Ordering number : ENN8342
2SC6019
2SC6019 NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
DataSheet4CUon.dcitoiomns
http://www.DataSheet4U.net/
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=12V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=500mA
VCE=2V, IC=500mA
Ratings
15
15
6
7
10
600
0.8
15
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
DataShee
min
250
Ratings
typ
max
Unit
0.1 µA
0.1 µA
400
380 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DataSheet4U.com
DataSheet4 U .com
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61005EA MS IM TB-00001434 No.8342-1/4


C6019 데이터시트, 핀배열, 회로
www.DataSheet4U.com
2SC6019
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=1.5A, IB=30mA
IC=3A, IB=60mA
IC=3A, IB=60mA
IC=10µA, IE=0A
IC=1mA, RBE=
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Package Dimensions
unit : mm
7518-003
6.5
5.0
4
2.3
0.5
Package Dimensions
unit : mm
7003-003
6.5
5.0
4
min
15
15
6
Ratings
typ
23
85
145
0.85
30
190
15
max
125
215
1.2
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
2.3
0.5
et4U.com
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
0.85
123
0.6
DataSheet4U2..3co2m.3
SANYO : TP
http://www.DataSheet4U.net/
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
DataShee
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
VR RB
50+
100µF
+
470µF
OUTPUT
RL
VBE= --5V
VCC=5V
IC=20IB1= --20IB2=3A
7 IC -- VCE
60mA 50mA
6
5
40mA
30mA
20mA
4
10mA
3
5mA
2
1
0
DataSheet4U.com 0
IB=0mA
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT09436
DataSheet4 U .com
8 IC -- VBE
VCE=2V
7
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Base-to-Emitter Voltage, VBE -- V IT09437
No.8342-2/4




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C6019 transistor

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