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Savantic |
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB616
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD586
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
CONDITIONS
http://www.DataSheet4U.net/
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
PC Collector power dissipation TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-100
-100
-5
-5
60
150
-55~150
UNIT
V
V
V
A
W
datasheet pdf - http://www.DataSheet4U.net/
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB616
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A
VBE Base-emitter on voltage
IC=-1A;VCE=-5V
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
fT Transition frequency
COB Collector output capacitance
IC=-1A ; VCE=-5V
http://www.DataSheet4U.net/
IE=0;f=1MHz;VCB=-10V
MIN TYP. MAX UNIT
-100
V
-100
V
-5 V
-1.5 V
-1.5 V
-0.1 mA
-0.1 mA
50
11 MHz
140 pF
2
datasheet pdf - http://www.DataSheet4U.net/
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