파트넘버.co.kr MJ1001 데이터시트 PDF


MJ1001 반도체 회로 부품 판매점

(MJ1000 / MJ1001) Complementary Power Darlingtons



Comset Semiconductors 로고
Comset Semiconductors
MJ1001 데이터시트, 핀배열, 회로
NPN MJ1000 – MJ1001
COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington
configuration, and are mounted in JEDEC TO-3 metal case.
They are intended for use in power linear and switching applications.
Their complementary PNP types are the MJ900 and MJ901 respectively.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCEO
VEBO
IC
IB
PT
TJ
TS
Collector-Base Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IB=0
http://www.DataSheet4U.net/
IC(RMS)
@ TC < 25°
Derate above 25°C
Value
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
60
80
60
80
5.0
8.0
0.1
90
0.515
-65 to +200
Unit
V
V
V
A
A
W
W/°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.94
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/


MJ1001 데이터시트, 핀배열, 회로
NPN MJ1000 – MJ1001
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO
ICEO
IEBO
ICER
VCE(SAT)
VF
VBE
HFE
Collector-Emitter
Breakdown Voltage (*)
IC=100 mA, IB=0
MJ1000 60
MJ1001 80
-
-
-
-
V
Collector Cutoff Current VCE=30 V, IB=0
VCE=40 V, IB=0
MJ1000
MJ1001
-
-
-
-
500 µA
Emitter Cutoff Current
VBE=5.0 V, IC=0
MJ1000
MJ1001
-
- 2.0 mA
Collector-Emitter Leakage
Current
VCB=60 V,
RBE=1.0 k
VCB=80 V
RBE=1.0 k
VCB=60 V
RBE=1.0 k
TC=150°C
VCB=80 V
http://www.DataSheet4U.net/
RBE=1.0 k
TC=150°C
MJ1000
MJ1001
-
-
MJ1000 -
MJ1001 -
-
1.0
-
- mA
5.0
-
Collector-Emitter
saturation Voltage (*)
IC=3.0 A, IB=2 mA
IC=8.0 A, IB=40 mA
MJ1000
MJ1001
MJ1000
MJ1001
-
-
- 2.0
V
- 4.0
Forward Voltage (pulse
method)
IF=3 A
MJ1000
MJ1001
-
1.8
-
V
Base-Emitter Voltage (*)
IC=3.0 A, VCE=3.0 V
MJ1000
MJ1001
-
- 2.5 V
DC Current Gain (*)
VCE=3.0 V, IC=3.0 A
VCE=3.0 V, IC=4.0 A
MJ1000
MJ1001
MJ1000
MJ1001
1000
750
-
-
-
-
-
(*) Pulse Width 300 µs, Duty Cycle 2.0%
29/10/2012
COMSET SEMICONDUCTORS
2|3
datasheet pdf - http://www.DataSheet4U.net/




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제조업체: Comset Semiconductors

( comsets )

MJ1001 data

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:

[ MJ1001.PDF ]

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