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Comset Semiconductors |
PNP BDW84 – BDW84A – BDW84B
BDW84C – BDW84D
PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package.
They are intended for use in power linear and switching applications.
The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCEO
VCBO
VEBO
IC
IB
Pt
TJ
TStg
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
www.DataSheet.net/
IE = 0
IC = 0
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
25°C case temperatur
25°C free aire temperatur
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-15
-0.5
150
3.5
-65 to +150
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
Junction to Case Thermal Resistance
Junction to Free Air Thermal Resistance
Value
0.83
35.7
Unit
V
V
V
A
A
W
°C
°C
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDW84 – BDW84A – BDW84B
BDW84C – BDW84D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDW84 -45 -
-
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC=30 mA
IB=0
BDW84A -60 -
-
BDW84B -80 - - V
BDW84C -100 -
-
BDW84D -120 -
-
ICEO
ICBO
IEBO
hFE
VCE(SAT)
VBE(on)
VEC
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter Voltage (*)
Parallel Diode Forward
Voltage
IB=0, VCE=-30 V BDW84
IB=0, VCE=-30 V BDW84A
IB=0, VCE=-40 V BDW84B
IB=0, VCE=-50 V BDW84C
IB=0, VCE=-60 V BDW84D
IE= 0, VCB=-45 V BDW84
IE= 0, VCB=-60 V BDW84A
IE= 0, VCB=-80 V
www.DataSheet.net/
BDW84B
IE= 0, VCB=-100 V BDW84C
IE= 0, VCB=-120 V BDW84D
VCB=-45 V, IE= 0
Tcase = 150°C
BDW84
VCB=-60 V, IE= 0
Tcase = 150°C
BDW84A
VCB=-80 V, IE= 0
Tcase = 150°C
BDW84B
VCB=-100 V, IE= 0
Tcase = 150°C
BDW84C
VCB=-120 V, IE= 0
Tcase = 150°C
BDW84D
VEB=-5.0 V, IC=0
IC=-6 A , VCE=-3.0 V
IC=-15 A , VCE=-3.0 V
IC=-6 A , IB=-12 mA
IC=-15 A , IB=-150 mA
IC=-6 A , IB=-3 A
IE =-15 A , IE= 0
-
-
-
-
750
100
-
-
-
-
- -1 mA
- -0.5
mA
- -5
- -2 mA
-
-
20 K
-
-
-
-
-2.5
-4
V
- -2.5 V
- -3.5 V
ton Turn-on time
toff Turn-off time
IC = -10 A,
IB1 =-IB2=-40 mA
RL=3Ω; VBE(off) = 4.2V
Duty Cycle≤2%
- 0.9 -
-7-
µs
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
23/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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