파트넘버.co.kr BDW83A 데이터시트 PDF


BDW83A 반도체 회로 부품 판매점

NPN SILICON POWER DARLINGTONS



Comset Semiconductors 로고
Comset Semiconductors
BDW83A 데이터시트, 핀배열, 회로
NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
NPN SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec
TO-218 plastic package.
They are intended for use in power linear and switching applications.
The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCEO
VCBO
VEBO
IC
IB
Pt
TJ
TStg
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
www.DataSheet.net/
IE = 0
IC = 0
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
25°C case temperatur
25°C free aire temperatur
45
60
80
100
120
45
60
80
100
120
5
15
0.5
150
3.5
-65 to +150
-65 to +150
Unit
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
Junction to Case Thermal Resistance
Junction to Free Air Thermal Resistance
Value
0.83
35.7
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


BDW83A 데이터시트, 핀배열, 회로
NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDW83
VCEO(SUS)
Collector-Emitter Sustaining IC=30 mA
Voltage (*)
IB=0
BDW83A
BDW83B
BDW83C
BDW83D
ICEO
ICBO
IEBO
hFE
VCE(SAT)
VBE(on)
VEC
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (1)
Base-Emitter Voltage (*)
Parallel Diode Forward
Voltage
IB=0, VCE=30 V BDW83
IB=0, VCE=30 V BDW83A
IB=0, VCE=40 V BDW83B
IB=0, VCE=50 V BDW83C
IB=0, VCE=60 V BDW83D
IE= 0, VCB=45 V BDW83
IE= 0, VCB=60 V BDW83A
IE= 0, VCB=80 Vwww.DataSheet.net/
BDW83B
IE= 0, VCB=100 V BDW83C
IE= 0, VCB=120 V BDW83D
IE= 0, VCB=45 V
Tcase = 150°C
BDW83
IE= 0, VCB=60 V
Tcase = 150°C
BDW83A
IE= 0, VCB=80 V
Tcase = 150°C
BDW83B
IE= 0, VCB=100 V
Tcase = 150°C
BDW83C
IE= 0, VCB=120 V
Tcase = 150°C
BDW83D
VEB=5.0 V, IC=0
IC=6 A , VCE=3.0 V
IC=15 A , VCE=3.0 V
IC=6 A , IB=12 mA
IC=15 A , IB=150 mA
IC=6 A , IB=3 A
IE = 15 A , IE= 0
ton Turn-on time
IC = 10 A,
IB1 =-IB2=40 mA
toff Turn-off time
RL=3; VBE(off) = -4.2V
Duty Cycle2%
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
45
60
80
100
120
-
-
-
-
750
100
-
-
-
-
-
-
--
--
- -V
--
--
- 1 mA
- 0.5
mA
-5
- 2 mA
-
-
20 K
-
-
- 2.5
- 4V
- 2.5
- 3.5 V
0.9 -
µs
7-
23/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/




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제조업체: Comset Semiconductors

( comsets )

BDW83A data

데이터시트 다운로드
:

[ BDW83A.PDF ]

[ BDW83A 다른 제조사 검색 ]




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