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BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
● Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
● 150 W at 25°C Case Temperature
● 15 A Continuous Collector Current
● Minimum hFE of 750 at 3V, 6 A
B
C
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
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Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TA
45
60
80
100
120
45
60
80
100
120
5
15
0.5
150
3.5
100
-65 to +150
-65 to +150
-65 to +150
V
V
V
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VBE(on)
VCE(sat)
VEC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
IC = 30 mA
IB = 0
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VEB = 5 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
IB = 12 mA
IB = 150 mA
IE = 15 A
IB = 0
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = 6 A
IC = 15 A
IC = 6 A
IC = 6 A
IC = 15 A
IB = 0
(see Note 5)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
45
60
80
100
120
750
(see Notes 5 and 6)
100
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(see Notes 5 and 6)
(see Notes 5 and 6)
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
5
5
5
5
5
2
20000
2.5
2.5
4
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
0.83 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff Turn-off time
IC = 10 A
VBE(off) = -4.2 V
IB(on) = 40 mA
RL = 3 Ω
IB(off) = -40 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.9 µs
7 µs
PRODUCT INFORMATION
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Datas
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