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Comset Semiconductors |
PNP BD240 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The NPN complements are BD239, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
Collector-Emitter Voltage
www.DataSheet.net/
Collector-Emitter Voltage (RBE = 100 Ω)
VCBO
Collector-Base Voltage
VEBO
IC
IB
PT
TJ
TS
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC
ICM
@ Tamb = 25° C
@ Tcase = 25° C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-amb
RthJ-case
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
BD240
BD240A
BD240B
BD240C
BD240
BD240A
BD240B
BD240C
BD240
BD240A
BD240B
BD240C
Value
-45
-60
-80
-100
-55
-70
-90
-115
-45
-60
80
-100
-5.0
-3
-7
0.5
30
30
150
-65 to +150
Value
70
4.17
Unit
V
V
V
V
A
A
W
W
°C
Unit
°C/W
°C/W
22/10/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BD240 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE=-30 V
BD240
ICEO
Collector Cutoff Current VCE=-30 V
VCE=-60 V
BD240A
BD240B
VCE=-60 V
BD240C
BD240
IEBO
Emitter Cutoff Current
VBE=-5 V
BD240A
BD240B
BD240C
VCE=-45 V
BD240
ICES
Collector Cutoff Current VCE=-60 V
(VBE = 0)
VCE=-80 V
BD240A
BD240B
VCE=-100 V
BD240C
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0) (*)
IC =-30mA
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BD240
BD240A
BD240B
BD240C
BD240
VCE=-4 V
IC=-0.2 A
BD240A
BD240B
hFE DC Current Gain (*)
BD240C
BD240
VCE=-4 V
IC=-1 A
BD240A
BD240B
BD240C
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC=-1 A
IB=-200 mA
BD240
BD240A
BD240B
BD240C
BD240
VBE(on)
Base-Emitter Voltage (*)
VCE=-4 V
IC=-1 A
BD240A
BD240B
BD240C
VCE=10 V
IC=0.2 A
f = 1KHz
hfe Small Signal Current Gain
VCE=-10 V
IC=-0.2 A
f = 1MHz
BD240
BD240A
BD240B
BD240C
BD240
BD240A
BD240B
BD240C
fT
Transistor frequency
VCE=-10 V, IC=-0.2 A, f = 1MHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Min
-
-
-
-
-
-
-
-
-
-
-
-
-45
-60
-80
-100
40
15
-
-
20
3
3
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Unit
-0.3 mA
-1.0 mA
-0.2 mA
V
-
-
-
0.6 V
1.3 V
--
--
- MHz
22/10/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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