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P7N80C 반도체 회로 부품 판매점

FQP7N80C



Fairchild Semiconductor 로고
Fairchild Semiconductor
P7N80C 데이터시트, 핀배열, 회로
FQP7N80C/FQPF7N80C
800V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 6.6A, 800V, RDS(on) = 1.9@VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
www.DataSheet.net/
TO-220F
FQPF Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP7N80C FQPF7N80C
800
6.6 6.6 *
4.2 4.2 *
26.4 26.4 *
± 30
580
6.6
16.7
4.5
167 56
1.33 0.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP7N80C
0.75
0.5
62.5
FQPF7N80C
2.25
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
Datasheet pdf - http://www.DataSheet4U.co.kr/


P7N80C 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
800 --
ID = 250 µA, Referenced to 25°C -- 0.93
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.3 A
VDS = 50 V, ID = 3.3 A
(Note 4)
3.0
--
--
--
1.57
5.5
5.0
1.9
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1290 1680
-- 120 155
-- 10
13
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 6.6 A,
RG = 25
www.DataSheet.net/
(Note 4, 5)
VDS = 640 V, ID = 6.6 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
35
100
50
60
27
8.2
11
80
210
110
130
35
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.6 A
trr Reverse Recovery Time
VGS = 0 V, IS = 6.6 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 6.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 6.6
-- 26.4
-- 1.4
650 --
7.0 --
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
Datasheet pdf - http://www.DataSheet4U.co.kr/




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