파트넘버.co.kr UT2308 데이터시트 PDF


UT2308 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE



Unisonic Technologies 로고
Unisonic Technologies
UT2308 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
UT2308
Preliminary
N-CHANNEL
ENHANCEMENT MODE
„ DESCRIPTION
The UTC UT2308 is N-channel Power MOSFET, designed
with high density cell, with fast switching speed, ultra low
on-resistance and excellent thermal and electrical capabilities.
Used in commercial and industrial surface mount
applications and suited for low voltage applications such as
DC/DC converters.
„ SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2308L-AE3-R
UT2308G-AE3-R
www.DataSheet.net/
Package
SOT-23
Pin Assignment
12
3
SG
D
Packing
Tape Reel
„ MARKING
23G L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-128.d
Datasheet pdf - http://www.DataSheet4U.co.kr/


UT2308 데이터시트, 핀배열, 회로
UT2308
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20 V
Gate-Source Voltage
VGSS
±10 V
Continuous Drain Current
Power Dissipation
ID
PD
2.7 A
1.25 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
Static Drain-Source On-State
Resistance (Note2)
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate Source Charge
QG
QGS
Gate-Drain Charge
QGD
Note:1. Pulse width limited by TJ(MAX)
2. Pulse width300μs, duty cycle2%.
3. Surface mounted on FR4 board t5 sec.
TEST CONDITIONS
VGS =0 V, ID =250 µA
VDS =20 V, VGS =0 V
VDS =0 V, VGS = ±10V
VDS =VGS, ID =250 µA
VGS =4.5 V, ID =1A
VGS =2.5 V, ID =1A
www.DataSheet.net/
VGS=4.5V
MIN TYP MAX UNIT
20 V
1.0 µA
±100 nA
0.4 0.8 1.0 V
80 m
110 m
215 pF
65 pF
45 pF
3.8 nC
0.7 nC
0.9 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-128.d
Datasheet pdf - http://www.DataSheet4U.co.kr/




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