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UT2305A 반도체 회로 부품 판매점

P-CHANNEL ENHANCEMENT MODE



Unisonic Technologies 로고
Unisonic Technologies
UT2305A 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
UT2305A
P-CHANNEL ENHANCEMENT
MODE
„ DESCRIPTION
The UTC UT2305A is P-channel enhancement mode Power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
„ SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2305AL-AE3-R UT2305AG-AE3-R
Package
SOT-23
www.DataSheet.net/
Pin Assignment
123
SGD
Packing
Tape Reel
„ MARKING
B3E L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-192.C
Datasheet pdf - http://www.DataSheet4U.co.kr/


UT2305A 데이터시트, 핀배열, 회로
UT2305A
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDSS
- 30
V
Gate-Source Voltage
VGSS
± 12
V
Continuous Drain Current (Note 3) (Ta=25°C) ID -4.2 A
Pulsed Drain Current (Note 1, 2)
IDM -10 A
Total Power Dissipation (Ta=25°C)
PD 1.38 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
MIN
TYP
MAX
90
UNIT
°C/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient
BVDSS
IDSS
IGSS
ΔBVDSS/ΔTJ
VGS=0V, ID=-250μA
VDS=-30V, VGS=0V
VGS=±12V, VDS=0V
Reference to 25°C, ID=-1mA
-30
-0.1
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250μA
VGS=-10V, ID=-3.2A
V =-4.5V, I =-3.0AGSwww.DataSheet.net/
D
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
-0.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-15V, f=1MHz
740
167
126
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=-15V, VGS=-10V,
ID=-4.2A, RG=6, RD=3.6
VDS=-16V, VGS=-4.5V,
ID=-4.2A
5.9
3.6
32.4
2.6
10.6
2.32
3.68
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=-1.2A
Reverse Recovery Time
Reverse Recovery Charge
tRR VGS=0V, IS=-4.2A,
QRR dI/dt=100A/μs
27.7
22
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width 300μs, duty cycle2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min.
MAX UNITS
-1
±100
V
μA
nA
V/°C
-1.2 V
60 m
80 m
150 m
250 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-1.2 V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-192.C
Datasheet pdf - http://www.DataSheet4U.co.kr/




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