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Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
UT2305A
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC UT2305A is P-channel enhancement mode Power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2305AL-AE3-R UT2305AG-AE3-R
Package
SOT-23
www.DataSheet.net/
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
B3E L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-192.C
Datasheet pdf - http://www.DataSheet4U.co.kr/
UT2305A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDSS
- 30
V
Gate-Source Voltage
VGSS
± 12
V
Continuous Drain Current (Note 3) (Ta=25°C) ID -4.2 A
Pulsed Drain Current (Note 1, 2)
IDM -10 A
Total Power Dissipation (Ta=25°C)
PD 1.38 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
MIN
TYP
MAX
90
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient
BVDSS
IDSS
IGSS
ΔBVDSS/ΔTJ
VGS=0V, ID=-250μA
VDS=-30V, VGS=0V
VGS=±12V, VDS=0V
Reference to 25°C, ID=-1mA
-30
-0.1
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250μA
VGS=-10V, ID=-3.2A
V =-4.5V, I =-3.0AGSwww.DataSheet.net/
D
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
-0.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-15V, f=1MHz
740
167
126
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=-15V, VGS=-10V,
ID=-4.2A, RG=6Ω, RD=3.6Ω
VDS=-16V, VGS=-4.5V,
ID=-4.2A
5.9
3.6
32.4
2.6
10.6
2.32
3.68
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=-1.2A
Reverse Recovery Time
Reverse Recovery Charge
tRR VGS=0V, IS=-4.2A,
QRR dI/dt=100A/μs
27.7
22
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min.
MAX UNITS
-1
±100
V
μA
nA
V/°C
-1.2 V
60 mΩ
80 mΩ
150 mΩ
250 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-1.2 V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-192.C
Datasheet pdf - http://www.DataSheet4U.co.kr/
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