|
|
PDF G80N60UFD Data sheet ( Hoja de datos )
| Número de pieza | G80N60UFD | |
| Descripción | SGH80N60UFD | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
 1. - Fairchild ( PDF )  Hay una vista previa y un enlace de descarga de G80N60UFD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
SGH80N60UFD
Ultrafast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
TO-3P
GC E
www.DataSheet.net/
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGH80N60UFD
600
± 20
80
40
220
25
280
195
78
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.64
0.83
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
3000
1000
Eoff
100
Eon
10
0
10
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 5Ω
T = 25℃
C
T = 125℃
C
20 30 40 50 60 70 80
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
7.5
Ω
T = 25℃
12 C
9
300 V
6
V = 100 V
CC
200 V
3
0
0 30 60 90 120 150
Gate Charge, Q [ nC ]
g
Fig 14. Gate Charge Characteristics
180
500
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
500
100
10
www.DataSheet.net/
1
1
Safe Operating Area
VGE=20V, TC=100oC
10 100
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G80N60UFD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| G80N60UFD | SGH80N60UFD | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |