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RJH60F6BDPQ-A0 반도체 회로 부품 판매점

High Speed Power Switching



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Renesas
RJH60F6BDPQ-A0 데이터시트, 핀배열, 회로
Preliminary Datasheet
RJH60F6BDPQ-A0
600V - 45A - IGBT
High Speed Power Switching
R07DS0632EJ0100
Rev.1.00
Feb 17, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
123
Absolute Maximum Ratings
www.DataSheet.net/
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-cd
Tj
Tstg
1. Gate
2. Collector
3. Emitter
4. Collector
E
Ratings
600
±30
85
45
170
100
297.6
0.42
1.1
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 1 of 8
Datasheet pdf - http://www.DataSheet4U.co.kr/


RJH60F6BDPQ-A0 데이터시트, 핀배열, 회로
RJH60F6BDPQ-A0
Preliminary
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF
trr
Notes: 3. Pulse test
Min
4
Typ
1.35
3800
150
65
58
80
131
74
2.5
25
Max
100
±1
8
1.75
3.0
Unit
A
A
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 45 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3,
Inductive load
IF = 30 A Note3
IF = 30 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 2 of 8
Datasheet pdf - http://www.DataSheet4U.co.kr/




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High Speed Power Switching - Renesas