파트넘버.co.kr AG101 데이터시트 PDF


AG101 반도체 회로 부품 판매점

GaAs MMIC Gain Block



TriQuint Semiconductor 로고
TriQuint Semiconductor
AG101 데이터시트, 핀배열, 회로
AG101
GaAs MMIC Gain Block
Product Features
60 3000 MHz
14 dB Gain
2.4 dB Noise Figure
+32 dBm OIP3
Single +3.3 or +4.5 Supply
Internally matched to 50
Lead-free/Green/RoHS-compliant
SOT-89 Package
MTTF > 10,000 years
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
DBS / WLL / WLAN / WiBro
Defense / Homeland Security
Product Description
Functional Diagram
The AG101 is a general-purpose gain block that offers
good dynamic range and low noise figure in a low-cost
surface-mount package. The combination of near-
constant OIP3 and low noise figure performance over
frequency makes it attractive for both narrowband and
broadband applications. The device combines dependable
performance with superb quality to maintain MTTF
values exceeding 10,000 years at mounting temperatures
of +85 C and is available in the environmentally-
friendly lead-free/green /RoHS-compliant SOT-89
package.
The AG101 uses a high reliability GaAs MMIC
technology and only requires DC-blocking and bypass
capacitors, and an inductive RF choke for operation.
Internal matching provides a 50 ohm input / output
impedance minimizing the number of required external
components.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input / Base
Output / Collector
Ground
Pin No.
1
3
2, 4
The broadband MMIC amplifier is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AG101 will work for other applications within the 60 to
3000 MHz frequency range such as fixed wireless.
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss (5)
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure (3)
Operating Current Range
Supply Voltage
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
Min
60
13
+28
40
Typ
800
14
8.5
20
+15
+32
2.4
50
4.5
Max
3000
16
75
1. Test conditions unless otherwise noted: T = 25 ºC, 50 system.
2. OIP3 measured with two tones at an output power of +2.5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Noise figure can be optimized by matching the input for optimal return loss.
4. A supply voltage between 3 to 4.5V can be used for the devices.
Typical Performance (1)
Parameterwww.DataSheet.net/
Frequency
S21
S11 (5)
S22
Output P1dB
Output IP3
Noise Figure
Supply Voltage
Device Current
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Typical
900 1900 900 1900
14 12.8 14 12.5
-10 -9 -10 -9
-27 -22 -28 -19
+15 +15 +14 +14
+32.5 +33.1 +32 +32.5
2.4 2.6 2.2 2.4
+4.5 +3.3
50 48
Not Recommended for
New Designs
Absolute Maximum Rating
Recommended Replacement
Part: TQP3M9005
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance
Junction Temperature for >106 hours MTTF
Rating
-55 to +150 C
+5.5 V
+4 dBm
+160 C
88 C / W
Operation of this device above any of these parameters may cause permanent
damage.
Ordering Information
Part No.
Description
AG101-G
GaAs MMIC Gain Block
(lead-free/green/RoHS-compliant SOT-89 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com
Page 1 of 6 May 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/


AG101 데이터시트, 핀배열, 회로
AG101
GaAs MMIC Gain Block
Typical Device Data
S-Parameters (VDS = +4.5 V, IDS = 50 mA, T = 25 C, 50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
Gain vs. Frequency
16
14
12
10
8
-40c +25c +85c
6
0 500 1000 1500 2000 2500 3000
Frequency (MHz)
OIP3 vs. Frequency
34
32
30
28
26
Pout = 2dB/tone
24
0 500 1000 1500 2000 2500 3000
Frequency (MHz)
www.DataSheet.net/
Noise Figure vs. Frequency
6
5
4
3
2
1
0
0 500 1000 1500 2000 2500 3000
Frequency (MHz)
S-Parameters (VD = +4.5 V, ID = 50 mA, T = 25 C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
50
-4.72
-30.88
15.44
164.91
-21.66
250
-8.67
-27.48
13.93
165.39
-20.26
500
-8.96
-37.68
13.75
157.18
-20.14
750
-9.06
-51.15
13.60
148.11
-20.02
1000
-9.04
-66.87
13.47
137.91
-19.92
1250
-9.00
-82.11
13.39
128.62
-19.85
1500
-8.89
-97.31
13.13
118.57
-19.73
1750
-8.74
-112.48
12.91
109.09
-19.56
2000
-8.65
-128.51
12.68
99.48
-19.71
2250
-8.40
-142.86
12.48
89.94
-19.53
2500
-7.99
-157.26
12.22
80.41
-19.40
2750
-7.93
-171.48
11.88
71.42
-19.33
3000
-7.47
175.92
11.53
62.05
-19.58
S12 (ang)
30.26
3.92
-2.25
-7.65
-10.63
-15.19
-18.74
-23.00
-28.33
-33.37
-37.91
-42.30
-47.37
S22 (dB)
-9.38
-16.70
-17.56
-18.25
-19.05
-20.28
-21.30
-22.57
-25.15
-27.03
-28.58
-28.56
-28.48
S22 (ang)
-40.39
-32.88
-31.25
-35.67
-43.62
-51.49
-61.37
-73.75
-85.19
-103.19
-135.19
-177.83
153.84
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com
Page 2 of 6 May 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/




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