파트넘버.co.kr RJQ6020DPM 데이터시트 PDF


RJQ6020DPM 반도체 회로 부품 판매점

N-Channel MOS FET



Renesas 로고
Renesas
RJQ6020DPM 데이터시트, 핀배열, 회로
RJQ6020DPM
600V - 20A - MOS FET
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Built in fast recovery diode in one package
Outline
RENESAS Package code: PRSS0005ZB-A)
(Package name: TO-3PFM)
Preliminary Datasheet
R07DS0649EJ0100
Rev.1.00
Jan 23, 2012
2
12345
1, 3
1. Anode
2. Cathode
3. Anode, Drain
5 4. Source
5. Gate
4
Absolute Maximum Ratings
MOS FET
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Limited by maximum safe operating area.
Diode
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction temperature
Storage temperature
www.DataSheet.co.kr
Symbol
VDSS
VGSS
ID Note2
ID(pulse) Note1
IDR Note2
IDR(pulse)Note1
Tch
Tstg
Symbol
VRM
IF
IFSM
Tj
Tstg
Ratings
600
+30, 20
20
40
20
40
150
–55 to +150
Ratings
600
10
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
°C
°C
(Ta = 25°C)
Unit
V
A
A
°C
°C
R07DS0649EJ0100 Rev.1.00
Jan 23, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.net/


RJQ6020DPM 데이터시트, 핀배열, 회로
RJQ6020DPM
Electrical Characteristics
MOS FET
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Body-drain diode forward voltage
Notes: 3. Pulse test
4. Value at pin 3 to pin 4.
Diode
Item
Forward voltage
Reverse current
Reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
600
3
Ciss
Coss
Crss
VDF
Symbol
VF
IR
trr
Min
Preliminary
Typ
0.100
Max
1
±0.1
5
0.125
Unit
V
mA
μA
V
Ω
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = +30V, 20 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 15 A, VGS = 10 V Note3, 4
2900 — pF VDS = 25 V
3800 — pF VGS = 0
4 — pF f = 100 kHz
1.0 1.6 V IF = 30 A, VGS = 0 Note3
(Tj = 25°C)
Typ Max Unit
Test conditions
1.5 2.0 V IF = 10 A
10 μA VR = 600 V
15 ns IF = 10 A, di/dt = –300A/μs
www.DataSheet.co.kr
R07DS0649EJ0100 Rev.1.00
Jan 23, 2012
Page 2 of 3
Datasheet pdf - http://www.DataSheet4U.net/




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RJQ6020DPM

N-Channel MOS FET - Renesas