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PDF BGS2 Data sheet ( Hoja de datos )
| Número de pieza | BGS2 | |
| Descripción | 50-4000 MHz SILICON GERMANIUM Gain Block | |
| Fabricantes | Berex | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BGS2 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BGS2
50-4000 MHz SILICON GERMANIUM Gain Block
Device Features
Single Fixed 3V supply
No Dropping Resistor Required
No matching circuit needed
Lead-free/Green/RoHS compliant SOT-363 package
Application: Driver Amplifier, Cellular, PCS, GSM,
UMTS, WCDMA, Wireless Data
Part Marking (X: Wafer number)
BS2XOUT GND
GND
GND
GND
IN
Pin Description
RF IN
3
RF OUT
6
GND 1,2,4,5
Product Description
BeRex’s BGS2 is a high SiGe HBT MMIC am-
plifier, internally matched to 50 Ohms with-
out the need for external components. De-
signed to run directly from a 3V supply. The
BGS2 is designed for high linearity 3V gain
block applications . It is packaged in a RoHS-
compliant with SOT-363 surface mount
package.
Applications
Driver Amplifier
Cellular, PCS, GSM, UMTS, WCDMA
Applications Circuit
Application Circuit Values Example
Freq.
70~900MHz
900MHz ~ 4GHz
C1/C2
L1(1608 Chip Ind.)
2nF 100pF
1uH 56nH
C3 C4 C5
+3V
Typical Performance1
Parameter
Frequency
Unit
70 900 1900 2450 MHz
Gain 26.5 23.2 19.1 18.3 dB
S11 -21.0 -17.0 -17.0 -18.0 dB
S22
OIP32
-16.0
31.0
-15.0
24.8
-13.0 -15.0 dB
23.4 21.6 dBm
P1dB
15.4 13.1 12.1 10.6 dBm
Noise Figure 2.7 2.3 2.2 2.3 dB
1
www.DataSheet.co.kr
Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.
2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.
Bandwidth
IC @ (Vc = 3V)
VC
dG/dT
RTH
Min. Typical Max. Unit
70
4000
MHz
30 34 38 mA
3.0 V
-0.005
dB/°C
130 °C/W
RFin
C1
L1
BGS2
Absolute Maximum Ratings
Parameter
C2 RFout Operating Case Temperature
Storage Temperature
Rating
-40 to +85
-55 to +155
Unit
°C
°C
Junction Temperature
+150
°C
*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH
**less than 56nH improves RF performance at over 0.9GHz.
*1uH or higher value L1 improves RF performance at under 900MHz.
*Optimum value of L1 may vary with board design.
Operating Voltage
+3.8 V
Supply Current
100 mA
Input RF Power
15 dBm
Operation of this device above any of these parameters may result in permanent damage.
*C1,C2=2000pF, L1=1uH for 70MHz application,
BeRex
●website: www.berex.com
●email: [email protected]
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2012 BeRex
1
Rev. 1.0
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
BGS2
50-4000 MHz SILICON GERMANIUM Gain Block
Device Performance
Pin-Pout-Gain
900MHz, 3V/22mA
1900 MHz, 3V/22mA
www.DataSheet.co.kr
OIP3
BeRex
●website: www.berex.com
●email: [email protected]
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2012 BeRex
5
Rev. 1.0
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BGS2.PDF ] | |
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