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PDF GWM180-004X2 Data sheet ( Hoja de datos )
| Número de pieza | GWM180-004X2 | |
| Descripción | Three phase full Bridge | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 180-004X2
VDSS = 40 V
ID25 = 180 A
RDSon typ. = 1.9 mW
Preliminary data
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TJ = 25°C to 150°C
ID25
ID90
ID110
TC = 25°C
TC = 90°C
TC = 110°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
IF110 TC = 110°C (diode)
Maximum Ratings
40 V
± 20 V
180 A
136 A
120 A
182 A
112 A
88 A
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
VGS(th)
IDSS
IGSS
on chip level at
VGS = 10 V; ID = 100 A
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Qg
Qgs VGS = 10 V; VDS = 20 V; ID = 100 A
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = +10/0 V; VDS = 24 V
ID = 135 A; RG = 39 Ω;
TJ = 125°C
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1) VDS = ID·(RDS(on) + RPin to )Chip
1.9
2.8
2.5
50
110
33
30
150
240
350
170
0.12
0.51
0.003
1.3
2.5 mW
mW
4.5 V
5 µA
µA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307c
1-6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
GWM 180-004X2
12
10
8
VGS
6
[V]
4
ID = 135 A
TVJ = 25°C
VDS = 15 V
VDS = 28 V
2
0
0 20 40 60 80 100
QG [nC]
Fig. 7 Gate charge characteristics
120
200
180
160
140
ID120
100
[A]80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC [°C]
Fig. 8 Drain current ID vs. temperature TC
0.4
0.3
Eon,
Erec(off)
0.2
[mJ]
VDS = 15 V
VGS = +10/0 V
RG = 39 Ω
TVJ = 125°C
0.1
Eon
400
tr
300
t
200
td(on)
[ns]
100
0.0
0
10x Erec(off)
0
40 80 120 160 200
ID [A]
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
0.6 600
0.5 500
0.4
Eoff 0.3
[mJ]
0.2
VDS = 15 V
VGS = +10/0 V
RG = 39 Ω
TVJ = 125°C
400
td(off) 300
t
tf 200 [ns]
0.1 100
0.0
0
Eoff
40
0
80 120 160 200
ID [A]
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
1.0
0.8
Eon,
Erec(on) 0.6
[mJ] 0.4
VDS = 15 V
VGS = +10/0 V
ID = 135 A
TJ = 125°C
500
tr
td(on)
400
300
t
[ns]
200
0.2 100
0.0
0
Eon
20
Erec(on) x10
40 60
80
0
100 120
RG [Ω]
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
1.0
0.8
Eoff 0.6
[mJ]
0.4
VDS = 15 V
VGS = +10/0 V
ID = 135 A
TVJ = 125°C
Eoff
0.2
td(off)
1000
800
600 t
[ns]
400
tf
200
0.0
0
0
20 40 60 80 100 120
RG [Ω]
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307c
5-6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GWM180-004X2.PDF ] | |
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