88N04 반도체 회로 부품 판매점
NP88N04
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 NEC |
www.DataSheet.co.kr
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N04EHE, NP88N04KHE
NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP88N04EHE-E1-AY Note1, 2
NP88N04EHE-E2-AY Note1, 2
NP88N04KHE-E1-AY Note1
NP88N04KHE-E2-AY Note1
NP88N04CHE-S12-AZ Note1, 2
NP88N04DHE-S12-AY Note1, 2
NP88N04MHE-S18-AY Note1
NP88N04NHE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
• Low input capacitance
Ciss = 7300 pF TYP.
• Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14236EJ8V0DS00 (8th edition)
Date Published October 2007 NS
1999, 2000, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±88
±352
Total Power Dissipation (TA = 25°C)
PT1
1.8
Total Power Dissipation (TC = 25°C) PT2 288
Channel Temperature
Tch 175
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to +175
IAS 75/88
EAS 562/232
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
2 Data Sheet D14236EJ8V0DS
Datasheet pdf - http://www.DataSheet4U.net/
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