J681 반도체 회로 부품 판매점
P-Channel MOSFET ( Transistor ) - 2SJ681
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 Toshiba |
www.DataSheet4U.com
www.DataSheet.co.kr
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
2SJ681
Relay Drive, DC−DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
−60
−60
±20
−5
−20
20
40.5
−5
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
６．５±０．２
５．２±０．２
Unit: mm
０．６ MAX．
０．９
２．３ ２．３
１．１±０．２
０．６ MAX
１２３
０．８ MAX．
１．1 MAX．
０．６±０．１５
０．６±０．１５
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
6.25
125
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH,
RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-06-30
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet4U.com
www.DataSheet.co.kr
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±16 V, VDS = 0 V
VDS = −60 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
ID = −10 mA, VGS = 20 V
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −2.5 A
VGS = −10 V, ID = −2.5 A
VDS = −10 V, ID = −2.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
VGS0 V
−10 V
ID = −2.5 A
Output
RL =
12 Ω
VDD ∼− −30 V
Duty <= 1%, tw = 10 µs
Qg
Qgs VDD ≈ −48 V, VGS = −10 V, ID = −5 A
Qgd
2SJ681
Min
—
—
−60
−35
−0.8
—
—
2.5
—
—
—
Typ.
—
—
—
—
—
0.16
0.12
5.0
700
60
90
Max
±10
−100
—
—
−2.0
0.25
0.17
—
—
—
—
Unit
µA
µA
V
V
V
Ω
S
pF
— 14 —
— 24 —
ns
— 14 —
— 95 —
— 15 —
— 11 — nC
—4—
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = −5 A, VGS = 0 V
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A / µS
Min Typ. Max Unit
— — −5 A
— — −20 A
— — 1.7 V
— 40 — ns
— 32 — nC
Marking
J681
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-06-30
Datasheet pdf - http://www.DataSheet4U.net/
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J681 data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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