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PDF J377 Data sheet ( Hoja de datos )
| Número de pieza | J377 | |
| Descripción | P-Channel MOSFET ( Transistor ) - 2SJ377 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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 1. Vdss = -60V - Toshiba  Hay una vista previa y un enlace de descarga de J377 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SJ377
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L2−π−MOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain-source ON-resistance
: RDS (ON) = 0.16 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
−60
−60
±20
−5
−20
20
273
−5
2
150
−55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25 °C / W
Thermal resistance, channel to ambient
Rth (ch−a)
125 °C / W
Note 1:
Note 2:
Note 3:
Ensure that the channel temperature does not exceed 150°C.
VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω,
IAR = −5 A
Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2010-02-05
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
2SJ377
5 2010-02-05
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet J377.PDF ] | |
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