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PDF P40NF10 Data sheet ( Hoja de datos )
| Número de pieza | P40NF10 | |
| Descripción | STP40NF10 | |
| Fabricantes | STMicroelectronics | |
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STP40NF10
STB40NF10 - STB40NF10-1
N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2PAK/I2PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP40NF10
www.DataSheet4U.cSoTmB40NF10
STB40NF10-1
100 V
100 V
100 V
< 0.028 Ω
< 0.028 Ω
< 0.028 Ω
50 A
50 A
50 A
s TYPICAL RDS(on) = 0.024Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
2
1
TO-220
3
1
D2PAK
123
I2PAK
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(*)
ID
IDM (l)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2)
Tstg
Single Pulse Avalanche Energy
Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
(*) Limited by Package
September 2002
Value
100
100
± 20
50
35
200
150
1
20
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
– 55 to 175
°C
(1) ISD ≤40A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 40A, VDD = 50V
1/11
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Normalized Gate Threshold Voltage vs
Temperature
STP40NF10 - STB40NF10 - STB40NF10-1
Normalized On Resistance vs Temperature
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Source-drain Diode Forward Characteristics
Normalized Drain-Source Breakdown vs
Temperature
5/11
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5 Page 
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STP40NF10 - STB40NF10 - STB40NF10-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
11/11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet P40NF10.PDF ] | |
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