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NTF6P02T3
Power MOSFET
-6.0 Amps, -20 Volts
P–Channel SOT–223
Features
• Low RDS(on)
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
Typical Applications
• Power Management in Portables and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
–6.0 AMPERES
–20 VOLTS
RDS(on) = 44 mW (Typ.)
P–Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
VDSS
–20
Gate–to–Source Voltage
VGS ±8.0
Drain Current (Note 1)
– Continuous @ TA = 25°C
– Continuous @ TA = 70°C
– Single Pulse (tp = 10 µs)
ID –10
ID –8.4
IDM –35
Total Power Dissipation @ TA = 25°C
PD 8.3
Operating and Storage Temperature Range
TJ, Tstg –55 to
+150
Unit
Vdc
Vdc
Adc
Apk
W
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = –20 Vdc, VGS = –5.0 Vdc,
IL(pk) = –10 A, L = 3.0 mH, RG = 25W)
EAS 150 mJ
Thermal Resistance
– Junction to Lead (Note 1)
– Junction to Ambient (Note 2)
– Junction to Ambient (Note 3)
RθJL
RθJA
RθJA
°C/W
15
71.4
160
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL 260 °C
1. Steady State.
2. When surface mounted to an FR4 board using 1″ pad size,
(Cu. Area 1.127 in2), Steady State.
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 in2), Steady State.
G
S
MARKING
DIAGRAM
1
2
3
4 SOT–223
CASE 318E
STYLE 3
AWW
6P02
A
WW
6P02
= Assembly Location
= Work Week
= Device Code
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package Shipping
NTF6P02T3
SOT–223 4000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
September, 2002 – Rev. 0
1
Publication Order Number:
NTF6P02T3/D
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NTF6P02T3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 4)
(VGS = 0 Vdc, ID = –250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
–20
–
–25
–11
Vdc
–
– mV/°C
Zero Gate Voltage Drain Current
(VDS = –20 Vdc, VGS = 0 Vdc)
(VDS = –20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 4)
IDSS
mAdc
– – –1.0
– – –10
IGSS – – ± 100 nAdc
Gate Threshold Voltage (Note 4)
(VDS = VGS, ID = –250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Vdc
–0.4 –0.7 –1.0
– 2.6 – mV/°C
Static Drain–to–Source On–Resistance (Note 4)
(VGS = –4.5 Vdc, ID = –6.0 Adc)
(VGS = –2.5 Vdc, ID = –4.0 Adc)
(VGS = –2.5 Vdc, ID = –3.0 Adc)
Forward Transconductance (Note 4)
(VDS = –10 Vdc, ID = –6.0 Adc)
DYNAMIC CHARACTERISTICS
RDS(on)
gfs
–
–
–
–
mW
44 50
57 70
57 –
12 – Mhos
Input Capacitance
Output Capacitance
(VDS = –16 Vdc, VGS = 0 V,
f = 1.0 MHz)
Transfer Capacitance
Input Capacitance
Output Capacitance
(VDS = –10 Vdc, VGS = 0 V,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 5)
Ciss
Coss
Crss
Ciss
Coss
Crss
–
900 1200
pF
– 350 500
– 90 150
– 940 –
pF
– 410 –
– 110 –
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = –5.0 Vdc, ID = –1.0 Adc,
VGS = –4.5 Vdc,
RG = 6.0 W)
(VDD = –16 Vdc, ID = –6.0 Adc,
VGS = –4.5 Vdc,
RG = 2.5 W)
(VDS = –16 Vdc, ID = –6.0 Adc,
VGS = –4.5 Vdc) (Note 4)
SOURCE–DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Qgs
Qgd
– 7.0 12 ns
– 25 45
– 75 125
– 50 85
– 8.0 –
ns
– 30 –
– 60 –
– 60 –
– 15 20 nC
– 1.7 –
– 6.0 –
Forward On–Voltage
Reverse Recovery Time
(IS = –3.0 Adc, VGS = 0 Vdc) (Note 4)
(IS = –2.1 Adc, VGS = 0 Vdc)
(IS = –3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
(IS = –3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 4)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
5. Switching characteristics are independent of operating junction temperatures.
VSD
trr
ta
tb
QRR
– –0.82 –1.2 Vdc
– –0.74 –
– –0.68 –
– 42 –
ns
– 17 –
– 25 –
– 0.036 –
mC
http://onsemi.com
2
Datasheet pdf - http://www.DataSheet4U.net/
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