J629 반도체 회로 부품 판매점
P-Channel MOSFET ( Transistor ) - 2SJ629
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 Sanyo Semicon Device |
www.DataSheet.co.kr
Ordering number : EN9084A
2SJ629
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ629 General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm2!0.8mm)
Tc=25°C
Ratings
--12
±8
--4.5
--18
1.3
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : MC
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--2.2A
ID=--2.2A, VGS=--4.5V
ID=--1.1A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--12
--0.3
3.4
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.0 V
5.7 S
75 98 mΩ
110 155 mΩ
150 225 mΩ
450 pF
100 pF
85 pF
15 ns
140 ns
58 ns
52 ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82506 MS IM TC-00000118 / 82605PA MS IM TA-100585 No.9084-1/4
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7007A-003
Top View
4.5
1.6
1
0.4
2
0.5
1.5
3.0
3
2SJ629
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--6V, VGS=--4.5V, ID=--4.5A
VDS=--6V, VGS=--4.5V, ID=--4.5A
VDS=--6V, VGS=--4.5V, ID=--4.5A
IS=--4.5A, VGS=0V
min
Switching Time Test Circuit
www.DataSheet4U.com
Ratings
typ
6.5
0.8
2.0
--0.95
max
--1.5
Unit
nC
nC
nC
V
1.5
0.4
VIN
0V
--4.5V
VIN
PW=10µs
D.C.≤1%
G
VDD= --6V
ID= --2.2A
RL=2.73Ω
D VOUT
2SJ629
P.G 50Ω S
0.75
Bottom View
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
ID -- VDS
--2.5V
--1.8V
--1.5V
VGS= --1.0V
--0.1
--0.2
--0.3
--0.4
--0.5
Drain-to-Source Voltage, VDS -- V IT04325
--3.0
VDS= --6V
--2.5
ID -- VGS
--2.0
--1.5
--1.0
--0.5
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8
Gate-to-Source Voltage, VGS -- V IT04326
No.9084-2/4
Datasheet pdf - http://www.DataSheet4U.net/
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