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PDF 4500GM Data sheet ( Hoja de datos )

Número de pieza 4500GM
Descripción AP4500GM
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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Advanced Power
Electronics Corp.
AP4500GM
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
20V
30mΩ
6A
-20V
50mΩ
-5A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
20 -20
±12 ±12
6 -5
4.8 -4
20 -20
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
200609031

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4500GM pdf
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N-Channel
6
5
I D =6A
V DS =10V
4
3
2
1
0
0 2 4 6 8 10 12
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1
0.1 T A =25 o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
V DS (V)
10
100
Fig9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
AP4500GM
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 8. Typical Capacitance Characteristics
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform

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