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PDF W20NM60 Data sheet ( Hoja de datos )

Número de pieza W20NM60
Descripción STW20NM60
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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STW20NM60
N-CHANNEL 600V - 0.26Ω - 20A TO-247
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STW20NM60
600V < 0.29 Ω
20 A
n TYPICAL RDS(on) = 0.26Ω
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
600
600
±30
20
12.6
80
214
1.44
15
– 65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/8

1 page




W20NM60 pdf
STW20NM60
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8

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