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Número de pieza | J111 | |
Descripción | Switching | |
Fabricantes | Micross | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de J111 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! J111
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J111
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The TO-92
package is well suited for cost sensitive applications
and mass production.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J111
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
t(on) ≤ 4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
(See Packaging Information).
Maximum Temperatures
J111 Benefits:
Short Sample & Hold Aperture Time
Low insertion loss
Low Noise
J111 Applications:
Analog Switches
Commutators
Choppers
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
‐55°C to +150°C
‐55°C to +135°C
360mW
50mA
VGDS = ‐35V
VGSS = ‐35V
J111 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP. MAX UNITS
CONDITIONS
BVGSS
VGS(off)
VGS(F)
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
‐35 ‐‐
‐‐
‐3 ‐‐ ‐10
‐‐ 0.7 ‐‐
V
IG = 1µA, VDS = 0V
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
IDSS Drain to Source Saturation Current (Note 2) 20
‐‐
‐‐
IGSS
Gate Reverse Current
‐‐ ‐0.005 ‐1
mA
nA
VDS = 15V, VGS = 0V
VGS = ‐15V, VDS = 0V
IG
Gate Operating Current
‐‐ ‐0.5 ‐‐
pA
VDG = 15V, ID = 10mA
ID(off)
Drain Cutoff Current
‐‐ 0.005 1
nA
VDS = 5V, VGS = ‐10V
rDS(on)
Drain to Source On Resistance
‐‐ ‐‐
J111 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
Click Togfs
Forward Transconductance
‐‐ 6
30
MAX
‐‐
BuyΩ
UNITS
mS
IG = 1mA, VDS = 0V
CONDITIONS
VDS = 20V, ID = 1mA , f = 1kHz
gos
rDS(on)
Output Conductance
Drain to Source On Resistance
‐‐ 25 ‐‐ µS
‐‐ ‐‐ 30 Ω
VGS = 0V, ID = 0mA, f = 1kHz
Ciss
Input Capacitance
‐‐ 7 12 pF
VDS = 0V, VGS = ‐10V, f = 1MHz
Crss
Reverse Transfer Capacitance
‐‐ 3 5
en
Equivalent Noise Voltage
‐‐
3
‐‐ nV/√Hz
VDG = 10V, ID = 1mA , f = 1kHz
J111 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
td(on)
tr
td(off)
tf
Turn On Time
Turn On Rise Time
Turn Off Time
Turn Off Fall Time
2
2
ns
6
15
VDD = 10V
VGS(H) = 0V
See Switching Circuit
Note 1 ‐ Absolute maximum ratings are limiting values above which J111 serviceabili t y m a y b e i m p a i r e d . N o t e 2 – P u l s e t e s t : P W ≤ 3 0 0 µ s , D u t y C y c l e ≤ 3 %
J111 SWITCHING CIRCUIT PARAMETERS
VGS(L)
RL
ID(on)
‐12V
800Ω
12mA
Available Packages:
J111 in TO-92
J111 in bare die.
TO-92 (Bottom View)
SWITCHING TEST CIRCUIT
Micros s Components E urope
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet J111.PDF ] |
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