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Micross |
IT120A
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT120A
The IT120A is a monolithic pair of NPN transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The IT120A is a direct replacement for discontinued
Intersil IT120A.
FEATURES
Direct Replacement for INTERSIL IT120A
HIGH hFE @ LOW CURRENT
OUTPUT CAPACITANCE
VBE tracking
ABSOLUTE MAXIMUM RATINGS 1
≥ 200 @ 10µA
≤ 2.0pF
≤ 3.0µV°C
The 8 Pin P-DIP provides ease of manufacturing, and
@ 25°C (unless otherwise noted)
the symmetrical pinout prevents improper orientation.
Maximum Temperatures
(See Packaging Information).
Storage Temperature
Operating Junction Temperature
‐65°C to +200°C
‐55°C to +150°C
IT120A Features:
Maximum Power Dissipation
Continuous Power Dissipation (One side)
250mW
High hfe at low current
Tight matching
Tight VBE tracking
Low Output Capacitance
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
500mW
2.3mW/°C
4.3mW/°C
Collector Current
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐ ‐‐ 1 mV
IC = 10µA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential
Change with Temperature
‐‐ ‐‐
3 µV/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
|IB1 – IB2 |
Base Current Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
Click To BuyBVCBO
Collector to Base Voltage
45
‐‐ ‐‐ 2.5
TYP.
‐‐
MAX.
‐‐
UNITS
V
nA IC = 10µA, VCE = 5V
CONDITIONS
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
45 ‐‐ ‐‐ V
BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V
BVCCO
Collector to Collector Voltage
60 ‐‐ ‐‐ V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
hFE
DC Current Gain
200 ‐‐
‐‐
IC = 10µA, VCE = 5V
225 ‐‐
‐‐
IC = 1.0mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
‐‐ ‐‐ 0.5 V
IC = 0.5mA, IB = 0.05mA
IEBO
Emitter Cutoff Current
‐‐ ‐‐ 1 nA
IC = 0, VEB = 3V
ICBO
Collector Cutoff Current
‐‐ ‐‐ 1 nA
IE = 0, VCB = 45V
COBO
Output Capacitance
‐‐ ‐‐ 2 pF
IE = 0, VCB = 5V
CC1C2
IC1C2
Collector to Collector Capacitance
Collector to Collector Leakage Current
‐‐
‐‐
‐‐ 2 pF
‐‐ 10 nA
VCC = 0V
VCC = ±60V
fT
Current Gain Bandwidth Product 220 ‐‐
‐‐ MHz
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
Available Packages:
IT120A in P-DIP
IT120A available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
P-DIP (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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