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P5504EDG 반도체 회로 부품 판매점

P-Channel Logic Level Enhancement



Niko-Sem 로고
Niko-Sem
P5504EDG 데이터시트, 핀배열, 회로
NIKO-SEM
P-Channel Enhancement Mode
P5504EDG
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55mΩ
ID
-21A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-40
±20
-21
-13
-39
41
16
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 125 °C
-40
-1.5
VDS = -5V, VGS = -10V
-96
-2
V
-3
±250 nA
1
µA
10
A
REV1.0
www.DataSheet.in
Oct-12-2010
1


P5504EDG 데이터시트, 핀배열, 회로
NIKO-SEM
P-Channel Enhancement Mode
P5504EDG
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -8A
VDS = -10V, ID = -8A
65 94
mΩ
38 55
11 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = -10V, f = 1MHz
833
198
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -8A
VDS = -20V,
ID -1A, VGS = -10V, RGS = 6Ω
138
18
3.3
6.8
6.7 13.4
9.7 19.4
19.8 35.6
12.3 22.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = -8A, VGS = 0V
-21
-39
-1
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = -8A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
17
9
pF
nC
nS
A
V
nS
nC
REV1.0
www.DataSheet.in
Oct-12-2010
2




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