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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2058
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1366
·Low collector saturation voltage:
VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A
·Collector power dissipation:
PC=25W(TC=25 )
APPLICATIONS
·With general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
60
60
7
3
0.5
1.5
25
150
-55~150
UNIT
V
V
V
A
A
W
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBE Base-emitter on voltage
IC=0.5A;VCE=5V
ICBO Collector cut-off current
VCB=60V;IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=0.5A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=5V
COB Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=2.0A; IB1=-IB2=0.2A
VCC=30V ,RL=15A
hFE Classifications
OY
G
60-120 100-200 150-300
Product Specification
2SD2058
MIN TYP. MAX UNIT
60 V
1.5 V
3.0 V
10 µA
1.0 mA
60
3.0 MHz
35 pF
0.65 µs
1.30 µs
0.65 µs
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