J608 반도체 회로 부품 판매점
P-Channel MOSFET ( Transistor ) - 2SJ608
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 Sanyo Semiconductor Corporation |
Ordering number : ENN6995
Features
• Low ON-resistance.
• Ultrahigh speed switching.
• Low-voltage drive.
• Mounting height 9.5mm.
• Meets radial taping.
2SJ608
P-Channel Silicon MOSFET
2SJ608
Ultrahigh Speed Switching Applications
Package Dimensions
unit : mm
2085A
[2SJ608]
4.5
10.5
1.9
1.2
2.6
1.4
1.2
1.6
0.5
123
0.5
Specifications
Absolute Maximum Ratings at Ta=25°C
2.5 2.5
1 : Source
2 : Drain
3 : Gate
SANYO : FLP
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Ratings
--30
±20
--4
--16
1.4
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
min
--30
--1.0
2.9
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.4 V
4.2 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-2989 No.6995-1/4
www.DataSheet.in
2SJ608
Continued from preceding page.
Parameter
Symbol
Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on) 1
RDS(on) 2
RDS(on) 3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
IS=--4A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
G
VDD= --15V
ID= --2A
RL=7.5Ω
D VOUT
P.G 50Ω
2SJ608
S
Ratings
min typ max
Unit
60 78 mΩ
90 126 mΩ
100 140 mΩ
560 pF
150 pF
95 pF
9 ns
4 ns
70 ns
55 ns
12 nC
2 nC
2 nC
--0.88
--1.5 V
ID -- VDS
--6
--5 --3.5V
--3.0V
--4
--3
--2.5V
--2
--1
VGS= --2.0V
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT02844
RDS(on) -- VGS
200
Ta=25°C
ID -- VGS
--9
VDS= --10V
--8
--7
--6
--5
--4
--3
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT02845
RDS(on) -- Ta
200
150
--2.0A
100 ID= --1.0A
50
150
100
I
D=
--1.0A,
V
I
GS= --4.0V
D= --1.0A, V
GS=
--4.5V
ID= --2.0A, VGS= --10.0V
50
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT02846
www.DataSheet.in
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02847
No.6995-2/4
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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