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Hitachi Semiconductor |
4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A
P Channel: RDS(on) ≤ 0.9 Ω, VGS = –10 V, ID = –2 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
www.DataSheet.in
4AM15
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Device Operation
Ratings
Symbol
Nch Pch
VDSS
200 –200
VGSS
±20 ±20
ID 4 –4
ID(pulse)*1
16
IDR 4
Pch (Tc = 25°C)*2 32
Pch*2
4.0
–16
–4
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2
www.DataSheet.in
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