파트넘버.co.kr RJK0212DPA 데이터시트 PDF


RJK0212DPA 반도체 회로 부품 판매점

Silicon N Channel Power MOS FET Power Switching



Renesas Technology 로고
Renesas Technology
RJK0212DPA 데이터시트, 핀배열, 회로
RJK0212DPA
Silicon N Channel Power MOS FET
Power Switching
Features
Very high speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 9 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 678
Preliminary Datasheet
REJ03G1950-0011
Rev.0.11
Jul 02, 2010
5 678
D DDD
4 32 1
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
25
+16, –12
25
100
25
16
32
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1950-0011 Rev.0.11
Jul 02, 2010
www.DataSheet.in
Page 1 of 3


RJK0212DPA 데이터시트, 핀배열, 회로
RJK0212DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
25
1.2
Typ
9
12
40
1030
340
14
1.5
5.4
2.8
0.6
TBD
TBD
TBD
TBD
0.83
TBD
Max
±0.1
1
2.5
10.8
15.6
1440
2.5
1.08
Preliminary
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = +16, –12 V, VDS = 0
VDS = 20 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 12.5 A, VGS = 10 V Note4
ID = 12.5 A, VGS = 4.5 V Note4
ID = 12.5 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 25 A
VGS = 10 V, ID = 12.5 A
VDD 10 V
RL = 0.8
Rg = 4.7
IF = 25 A, VGS = 0 Note4
IF =25 A, VGS = 0
diF/ dt = 100 A/ s
REJ03G1950-0011 Rev.0.11
Jul 02, 2010
www.DataSheet.in
Page 2 of 3




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Renesas Technology

( renesas )

RJK0212DPA data

데이터시트 다운로드
:

[ RJK0212DPA.PDF ]

[ RJK0212DPA 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RJK0212DPA

Silicon N Channel Power MOS FET Power Switching - Renesas Technology