파트넘버.co.kr D2017M 데이터시트 PDF


D2017M 반도체 회로 부품 판매점

FTD2017M



Sanyo Semicon Device 로고
Sanyo Semicon Device
D2017M 데이터시트, 핀배열, 회로
Ordering number : ENA1176
FTD2017M
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
FTD2017M General-Purpose Switching Device
Applications
Features
Low ON-resistance.
2.5V drive.
Mount height 1.1mm.
Composite type, facilitating high-density mounting.
Drain common specifications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1000mm20.8mm) 1unit
When mounted on ceramic substrate (1000mm20.8mm)
Ratings
20
±12
6
40
1.2
1.25
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : D2017M
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS= ±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
min
20
0.5
5
Ratings
typ
max
Unit
V
1 μA
±10 μA
1.3 V
8.5 S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.DataSheet.in
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71608PA TI IM TC-00001413 No. A1176-1/4


D2017M 데이터시트, 핀배열, 회로
FTD2017M
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=6A, VGS=4.5V
ID=6A, VGS=4V
ID=3A, VGS=3.1V
ID=3A, VGS=2.5V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=6A
VDS=10V, VGS=4.5V, ID=6A
VDS=10V, VGS=4.5V, ID=6A
IS=6A, VGS=0V
min
13
14
15
15.4
Ratings
typ
17
18
19
20
930
1460
6400
3040
10
2
2.5
0.8
max
23
24
30
33
1.2
Unit
mΩ
mΩ
mΩ
mΩ
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7006A-005
3.0
85
0.125
14
0.25
0.65
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
Electrical Connection
8765
12 3 4
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
Top view
SANYO : TSSOP8
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.1%
G
VDD=10V
ID=5A
RL=2Ω
D VOUT
Rg
FTD2017M
P.G 50Ω S
Rg=2.4kΩ
www.DataSheet.in
No. A1176-2/4




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