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Toshiba |
2SB1018A
www.DataSheet4U.com
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications
Power Amplifier Applications
Unit: mm
• High collector current: IC = −7 A
• Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)
• Complementary to 2SD1411A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO −80 V
Emitter-base voltage
VEBO −5 V
Collector current
IC −7 A
Base current
IB −1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
30
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
2SB1018A
www.DataSheet4U.com
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −100 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −50 mA, IB = 0
hFE (1)
(Note)
VCE = −1 V, IC = −1 A
hFE (2)
VCE (sat)
VCE = −1 V, IC = −4 A
IC = −4 A, IB = −0.4 A
VBE (sat) IC = −4 A, IB = −0.4 A
fT VCE = −4 V, IC = −1 A
Cob VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― −5 μA
― ― −5 μA
−80 ―
―
V
70 ― 240
30 ― ―
― −0.3 −0.5
― −0.9 −1.4
V
― 10 ― MHz
― 250 ―
pF
Turn-on time
ton
20 μs Input IB2
Output
― 0.4
―
Switching time Storage time
Fall time
tstg IB1
VCC = −30 V
tf
−IB1 = IB2 = 0.3 A, duty cycle ≤ 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
― 2.5 ―
μs
― 0.5 ―
Marking
B1018A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21
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