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RJK03E5DPA 반도체 회로 부품 판매점

Silicon N Channel Power MOS FET



Renesas Technology 로고
Renesas Technology
RJK03E5DPA 데이터시트, 핀배열, 회로
Preliminary Datasheetwww.DataSheet4U.com
RJK03E5DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
REJ03G1929-0210
Rev.2.10
May 20, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 3.2 mtyp. (at VGS = 8 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5678
5 678
D DDD
4321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±12
40
160
40
15
22.5
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1929-0210 Rev.2.10
May 20, 2010
Page 1 of 6


RJK03E5DPA 데이터시트, 핀배열, 회로
RJK03E5DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
3.2
3.8
98
3370
400
250
1.8
25.5
8.5
6.8
16
7
63
10
0.39
26
Max
±0.1
1
2.5
3.9
4.7
4720
3.6
Preliminary
www.DataSheet4U.com
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 20A, VGS = 8.0 V Note4
ID = 20A, VGS = 4.5 V Note4
ID = 20A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 40 A
VGS = 8 V, ID = 20 A
VDD 10 V
RL = 0.5
Rg = 4.7
IF = 2 A, VGS = 0 Note4
IF =40 A, VGS = 0
diF/ dt = 100 A/ s
REJ03G1929-0210 Rev.2.10
May 20, 2010
Page 2 of 6




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Silicon N Channel Power MOS FET - Renesas Technology