파트넘버.co.kr W332M64V-XBX 데이터시트 PDF


W332M64V-XBX 반도체 회로 부품 판매점

32Mx64 Synchronous DRAM



White Electronic Designs 로고
White Electronic Designs
W332M64V-XBX 데이터시트, 핀배열, 회로
White Electronic Designs
W332M64V-XBX
www.DataSheet4U.com
32Mx64 Synchronous DRAM
FEATURES
High Frequency = 100, 125, 133MHz
Package:
• 219 Plastic Ball Grid Array (PBGA), 25 x 25mm
3.3V ±0.3V power supply
Fully Synchronous; all signals registered on positive
edge of system clock cycle
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access/precharge
Programmable Burst length 1,2,4,8 or full page
8192 refresh cycles
Commercial, Industrial and Military Temperature
Ranges
Organized as 32M x 64
Weight: W332M64V-XBX - 2.5 grams typical
BENEFITS
41% SPACE SAVINGS
Reduced part count
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Laminate interposer for optimum TCE match
Pinout compatible with lower densities
WEDPN4M64V-XBX, WEDPN8M64V-XBX and
WEDPN16M64V-XBX
* This product is subject to change without notice.
GENERAL DESCRIPTION
The 256MByte (2Gb) SDRAM is a high-speed CMOS,
dynamic random-access, memory using 4 chips containing
536,870,912 bits. Each chip is internally configured as a
quad-bank DRAM with a synchronous interface. Each of
the chip’s 134,217,728-bit banks is organized as 8,192
rows by 1,024 columns by 16 bits.
Read and write accesses to the SDRAM are burst ori-
ented; accesses start at a selected location and continue
for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command, which is then followed by a READ or
WRITE command. The address bits registered coincident
with the ACTIVE command are used to select the bank
and row to be accessed (BA0, BA1 select the bank; A0-
12 select the row). The address bits registered coincident
with the READ or WRITE command are used to select the
starting column location for the burst access.
The SDRAM provides for programmable READ or WRITE
burst lengths of 1, 2, 4 or 8 locations, or the full page, with
a burst terminate option. An AUTO PRECHARGE function
may be enabled to provide a self-timed row precharge that
is initiated at the end of the burst sequence.
The 2Gb SDRAM uses an internal pipelined architecture to
achieve high-speed operation. This architecture is compatible
with the 2n rule of prefetch architectures, but it also allows
the column address to be changed on every clock cycle to
achieve a high-speed, fully random access. Precharging
one bank while accessing one of the other three banks
will hide the precharge cycles and provide seamless, high-
speed, random-access operation.
The 2Gb SDRAM is designed to operate at 3.3V. An auto
refresh mode is provided, along with a power-saving,
power-down mode.
February 2005
Rev. 0
Discrete Approach
11.9 11.9 11.9 11.9
22.3
54
TSOP
54
TSOP
54
TSOP
54
TSOP
Area
4 x 265mm2 = 1060mm2
1
ACTUAL SIZE
White Electronic Designs
W332M64V-XBX
25
25
S
A
V
I
N
G
S
625mm2
41%
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com


W332M64V-XBX 데이터시트, 핀배열, 회로
White Electronic Designs
FIGURE 1 – PIN CONFIGURATION
W332M64V-XBX
www.DataSheet4U.com
TOP VIEW
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
A DQ0 DQ14 DQ15 VSS VSS A9 A10 A11 A8 VCCQ VCCQ DQ16 DQ17 DQ31 VSS
B DQ1 DQ2 DQ12 DQ13 VSS VSS A0 A7 A6 A1 VCC VCC DQ18 DQ19 DQ29 DQ30
C DQ3 DQ4 DQ10 DQ11 VCC VCC A2 A5 A4 A3 VSS VSS DQ20 DQ21 DQ27 DQ28
D DQ6 DQ5 DQ8 DQ9 VCCQ VCCQ A12 DNU DNU DNU VSS VSS DQ22 DQ23 DQ26 DQ25
E DQ7 DQML0 VCC DQMH0 NC NC NC BA0 BA1 NC NC NC DQML1 VSS NC DQ24
F CAS0# WE0# VCC CLK0 NC
RAS1# WE1# VSS DQMH1 CLK1
G CS0# RAS0# VCC CKE0 NC
CAS1# CS1# VSS NC CKE1
H VSS VSS VCC VCCQ VSS
VCC VSS VSS VCCQ VCC
J VSS VSS VCC VCCQ VSS
VCC VSS VSS VCCQ VCC
K NC CKE3 VCC CS3# NC
NC CKE2 VSS RAS2# CS2#
L NC CLK3 VCC CAS3# RAS3#
NC CLK2 VSS WE2# CAS2#
M DQ56 DQMH3 VCC WE3# DQML3 NC NC NC NC NC NC NC DQMH2 VSS DQML2 DQ39
N DQ57 DQ58 DQ55 DQ54 NC NC NC NC NC NC NC NC DQ41 DQ40 DQ37 DQ38
P DQ60 DQ59 DQ53 DQ52 VSS VSS NC NC NC NC VCC VCC DQ43 DQ42 DQ36 DQ35
R DQ62 DQ61 DQ51 DQ50 VCC VSS NC NC NC NC VSS VSS DQ45 DQ44 DQ34 DQ33
T VSS DQ63 DQ49 DQ48 VCCQ VCCQ NC NC NC NC VSS VSS DQ47 DQ46 DQ32 VCC
NOTE: DNU = Do Not Use; to be left unconnected for future upgrades.
NC = Not Connected Internally.
February 2005
Rev. 0
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com




PDF 파일 내의 페이지 : 총 15 페이지

제조업체: White Electronic Designs

( wed )

W332M64V-XBX data

데이터시트 다운로드
:

[ W332M64V-XBX.PDF ]

[ W332M64V-XBX 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


W332M64V-XBX

32Mx64 Synchronous DRAM - White Electronic Designs