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PDF JDV2S29FS Data sheet ( Hoja de datos )
| Número de pieza | JDV2S29FS | |
| Descripción | VCO for UHF Band Radio | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S29FS
VCO for UHF Band Radio
• High capacitance ratio : C1V/C4V =2.8 (typ.)
• Low series resistance : rs = 0.66 Ω (typ.)
• This device is suitable for use in small tuners.
JDV2S29FS
www.DataSheet4U.com
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 150 °C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 μA
VR = 6 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
⎯
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. Vsig = 100mVrms
Marking
0.2
0.07 M A ±0.05
0.1±0.05
0.48+-00..0023
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯
⎯⎯
1
3.59 ⎯ 3.87
1.26 ⎯
1.4
2.73 ⎯ 2.91
⎯ 0.66 0.77
V
nA
pF
⎯
Ω
1 2007-11-01
1 page | ||
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| PDF Descargar | [ Datasheet JDV2S29FS.PDF ] | |
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