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Toshiba Semiconductor |
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S71E
JDV2S71E
www.DataSheet4U.com
UHF SHF TUNING
Unit: mm
• High capacitance ratio: C1 V/C 25V = 11.5 (typ.)
• Low series resistance: rs = 1.0 Ω (typ.)
• Excellent C-V characteristics,and small tracking error.
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
VRM
Tj
Tstg
Rating
30
35(RL=10 kohm)
150
−55~150
Unit
V
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C1 V
C25 V
C1 V/C25 V
rs
IR = 1 μA
VR = 28 V
VR = 1 V, f = 1 MHz
VR = 25V, f = 1 MHz
⎯
VR = 5 V, f = 470 MHz
Note1: Signal level when capacitance is measured: Vsig = 500 mVrms
Note2:Available in matched group for capacitance to 6%
C (max) − C (min)
C (min)
<= 0.06
Marking
(VR=1 ~ 25V)
Min Typ. Max Unit
30 ⎯ ⎯
V
⎯ ⎯ 10 nA
6 ⎯ 7.2 pF
0.49 ⎯ 0.64 pF
10 11.5 ⎯
⎯ 1 1.5
⎯
Ω
FJ
1 2007-11-01
CV-VR
JDV2S71E
www.DataSheet4U.com
10
f=1MHz
1
0.1
0
5 10 15 20 25 30 35
VR(V)
rs-VR
2.5
f=470MHz
2
1.5
1
0.5
0
0.1 1 10 100
VR(V)
2 2007-11-01
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