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JDV2S28FS 반도체 회로 부품 판매점

Silicon Epitaxial Planar Type



Toshiba Semiconductor 로고
Toshiba Semiconductor
JDV2S28FS 데이터시트, 핀배열, 회로
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S28FS
VCO for UHF Band Radio
High capacitance ratio: C1V/C3V = 2.15 (typ.)
Low series resistance: rs = 0.39 (typ.)
This device is suitable for use in small tuners.
JDV2S28FS
www.DataSheet4U.com
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 150 °C
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C3V
C1V/C3V
rs
IR = 1 μA
VR = 5 V
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. Vsig = 100mVrms
Marking
0.2
0.07 M A ±0.05
0.1±0.05
0.48+-00..0023
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯ V
⎯ ⎯ 1 nA
10.2 10.83
pF
4.66 5.05
2.08 2.22
0.39 0.51 Ω
1 2007-11-01


JDV2S28FS 데이터시트, 핀배열, 회로
CV – VR
100
f =1MHz
Ta=25
10
1
01 23 45 67
REVERSE VOLTAGE VR (V)
JDV2S28FS
www.DataSheet4U.com
1.0
0.8
0.6
0.4
0.2
0.0
0.1
rs – VR
f =470MHz
Ta=25
1
REVERSE VOLTAGE VR (V)
10
2 2007-11-01




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JDV2S28FS

Silicon Epitaxial Planar Type - Toshiba Semiconductor



JDV2S28FS

Silicon Epitaxial Planar Type - Toshiba Semiconductor