WCMA4016U4X 반도체 회로 부품 판매점
256K x 16 Static RAM
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 Weida Semiconductor |
A4016U4X
WCMA4016U4X
Features
• Low Voltage range:
— 2.7V-3.3V
• Ultra-low active power
— Typical active current: 1.5 mA @ f = 1MHz
— Typical active current: 7 mA @ f = fmax
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The WCMA4016U4X is a high-performance CMOS static
RAMs organized as 256K words by 16 bits. These devices
feature advanced circuit design to provide ultra-low active cur-
rent. This device is ideal for portable applications such as cel-
lular telephones. The devices also have an automatic pow-
er-down feature that significantly reduces power consumption
by 80% when addresses are not toggling. The device can also
be put into standby mode reducing power consumption by
256K x 16 Static RAM
more than 99% when deselected (CE HIGH or both BLE and
BHE are HIGH). The input/output pins (I/O0 through I/O15) are
placed in a high-impedance state when: deselected (CE
HIGH), outputs are disabled (OE HIGH), both Byte High En-
able and Byte Low Enable are disabled (BHE, BLE HIGH), or
during a write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A17). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A17).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O8 to I/O15. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The WCMA4016U4X is available in a 48-ball FBGA package.
Logic Block Diagram
www.DataSheet4U.com
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DATA IN DRIVERS
256K x 16
RAM Array
2048 x 2048
I/O0 – I/O7
I/O8 – I/O15
COLUMN DECODER
Power -Down
Circuit
CE
BHE
BLE
BHE
WE
CE
OE
BLE
Pin Configuration[1, 2]
FBGA (Top View)
12
34
56
BLE OE A0 A1 A2 NC
I/O8 BHE A3 A4 CE I/O0
I/O9 I/O10 A5 A6 I/O1 I/O2
VSS I/O11 A17 A7 I/O3 Vcc
VCC I/O12 DNU A16 I/O4 Vss
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15 NC A12 A13 WE I/O7
NC A8 A9 A10 A11 NC
A
B
C
D
E
F
G
H
WCMA4016U4X
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential ...–0.5V to Vccmax + 0.5V
DC Voltage Applied to Outputs
in High Z State[3] ....................................–0.5V to VCC + 0.3V
www.DaDtCaSIhnepeut4t UV.oclotamge[3]..................................-0.5V to VCC + 0.3V
Product Portfolio
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Device
WCMA4016U4X
Range
Industrial
Ambient
Temperature
–40°C to +85°C
VCC
2.7V to 3.3V
Power Dissipation (Industrial)
Product
VCC Range
VCC(min.) VCC(typ.)[4] VCC(max.)
Speed
Operating, ICC
f = 1 MHz
f = fmax
Typ.[4] Max. Typ.[4] Max.
Standby (ISB2)
Typ.[4]
Max.
WCMA4016U4X 2.7V
3.0V
3.3V
70 ns 1.5 mA 3 mA 7 mA 15 mA 7 µA
15 µA
Notes:
1. NC pins are not connected to the die.
2. E3 (DNU) can be left as NC or Vss to ensure proper application.
3. VIL(min.) = –2.0V for pulse durations less than 20 ns.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
2
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