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Número de pieza | XP02501 | |
Descripción | Silicon NPN epitaxial planar type | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de XP02501 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Composite Transistors
XP02501 (XP2501)
Silicon NPN epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
(Base-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0601A (2SD601A) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO
VCEO
VEBO
60
50
7
Collector current
IC 100
Peak collector current
ICP 200
Total power dissipation
PT 150
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
0.20±0.05
5
4
Unit: mm
0.12+–00..0025
1 23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
1: Emitter (Tr1)
2: Base
3: Emitter (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: 5W
Internal Connection
5
4
Tr1 Tr2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
www.DataSheet4U.com
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open) ICEO
Forward current transfer ratio
hFE
hFE ratio *
hFE(Small/
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
VCE = 10 V, IC = 2 mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Large)
VCE(sat)
fT
Cob
IC = 100 mA, IB = 10 mA
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Min
60
50
7
160
0.50
Typ Max
0.1
100
460
0.99
0.1 0.3
150
3.5
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: August 2003
Note) The part number in the parenthesis shows conventional part number.
SJJ00156BED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet XP02501.PDF ] |
Número de pieza | Descripción | Fabricantes |
XP02501 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
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