파트넘버.co.kr 6CUT04 데이터시트 PDF


6CUT04 반도체 회로 부품 판매점

High Performance Schottky Generation



Vishay 로고
Vishay
6CUT04 데이터시트, 핀배열, 회로
6CUT04, 6CWT04FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 3 A
6CUT04
6CWT04FN
Base
common
cathode
4
Base
common
cathode
4
13
Anode 2 Anode
Common
cathode
I-PAK (TO-251AA)
2
1 Common 3
Anode cathode Anode
D-PAK (TO-252AA)
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Fully lead (Pb)-free and RoHS compliant devices
• Qualified for AEC Q101
PRODUCT SUMMARY
IF(AV)
VRRM
Maximum VF at 3 A at 125 °C
2x3A
45 V
0.54 V
APPLICATIONS
• Specific for PV cells pybass diode
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
www.DataSheet4U.com
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
3 Apk, TJ = 125 °C (typical, per leg)
Range
VALUES
45
0.46
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
6CUT04
6CWT04FN
45
UNITS
V
Document Number: 94650
Revision: 10-Dec-08
For technical questions, contact: [email protected]
www.vishay.com
1


6CUT04 데이터시트, 핀배열, 회로
6CUT04, 6CWT04FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 3 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average
forward current
per leg
per device
IF(AV)
50 % duty cycle at TC = 166 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche
energy per leg
5 µs sine or 3 µs rect. pulse
Following any rated load
IFSM condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
EAS TJ = 25 °C, IAS = 1.3 A, L = 16 mH
Repetitive avalanche current per leg
IAR
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
VALUES
3
6
440
70
14
IAS at
TJ max.
UNITS
A
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop per leg
VFM (1)
Reverse leakage current per leg
IRM (1)
Junction capacitance per leg
CT
Series inductance per leg
LS
Maximum voltage rate of change
dV/dt
Notes
(1) Pulse width < 300 µs, duty cycle < 2 %
www.DataSheet4U.com
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.535
0.615
0.485
0.570
-
-
240
8.0
-
MAX. UNITS
0.600
0.680
0.540
V
0.640
25 µA
3 mA
- pF
- nH
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
TJ, TStg
RthJC DC operation
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Approximate weight
Marking device
Case style I-PAK
Case style D-PAK
VALUES
- 55 to 175
UNITS
°C
4.7
2.35 °C/W
0.3
0.3 g
0.01 oz.
6CUT04
6CWT04FN
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 94650
Revision: 10-Dec-08




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High Performance Schottky Generation - Vishay